FQP16N25C 查看數據表（PDF） - Inchange Semiconductor
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FQP16N25C Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
·FEATURES
·With TO-220 packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
250
VGSS
ID
IDM
Gate-Source Voltage
Drain Current-Continuous;@Tc=25℃
Tc=100℃
Drain Current-Single Pulsed
±30
15.6
9.8
62.4
PD
Total Dissipation
139
Tj
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
℃
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
0.9
62.5
UNIT
℃/W
℃/W
FQP16N25C
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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