IRF1324S-7PPBF 查看數據表（PDF） - International Rectifier

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IRF1324S-7PPBF

HEXFET® Power MOSFET

International Rectifier 

IRF1324S-7PPbF

1

D = 0.50

0.1

0.01

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

τJ τJ

τ1 τ1

R1R1

Ci= τi/Ri

Ci i/Ri

R2R2

τ2 τ2

R3R3

τ3 τ3

0.001

1E-006

1E-005

0.0001

0.001

t1 , Rectangular Pulse Duration (sec)

R4R4

τCτ

Ri (°C/W)

0.02070

0.08624

τi (sec)

0.000010

0.000070

τ4 τ4

0.24491 0.001406

0.15005 0.009080

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.01

0.1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

Duty Cycle = Single Pulse

100

0.05

0.10

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Δ Tj = 150°C and

Tstart =25°C (Single Pulse)

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

1.0E-01

5

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April 08, 2014

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