IRF9530PBF 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

生产厂家

IRF9530PBF

P-Channel MOSFET Transistor

Inchange Semiconductor 

isc P-Channel MOSFET Transistor

INCHANGE Semiconductor

IRF9530PBF

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= -250μA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID= -250μA

RDS(on)

Drain-Source On-Resistance

VGS= -10V; ID= -16A

IGSS

Gate-Source Leakage Current

VGS= ±20V

IDSS

Drain-Source Leakage Current

VDS= -100V; VGS= 0V

VSD

Diode forward voltage

Is= -10A; VGS = 0V

MIN TYP MAX UNIT

-100

V

-2

-4

V

0.3

Ω

±10 μA

-1

μA

-1.2

V

isc website：www.iscsemi.cn

2 isc & iscsemi is registered trademark

Share Link: