IRF9530NPBF 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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IRF9530NPBF Datasheet PDF : 7 Pages
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IRF9530NPBF
P-Channel 100 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
- 100
0.167 at VGS = - 10 V
0.180 at VGS = - 4.5 V
ID (A)
- 18
- 14
Qg (Typ.)
37
TO-220AB
S
G
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
GD S
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 100
± 20
- 18
- 13
- 100
- 10
31
11.7b
1.1
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Symbol
RthJA
RthJC
Limit
60
9
Unit
V
A
mJ
W
°C
Unit
°C/W
E-mail：China@VBsemi TEL:86-755-83251052
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