IXFN100N25 查看數據表（PDF） - IXYS CORPORATION
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IXFN100N25 Datasheet PDF : 2 Pages
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
IXFN 100N25
VDSS =
ID25 =
= RDS(on)
250 V
100 A
27 mW
trr £ 250 ns
Symbol
VDSS
V
DGR
VGS
V
GSM
I
D25
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
T
stg
TL
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
I
S
£
I,
DM
di/dt
£
100
A/ms,
V
DD
£
V
DSS
TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
250
V
250
V
±20
V
±30
V
100
A
400
A
100
A
64
mJ
3
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20 V, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = 0.5 • ID25
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
250
V
2
4V
±200 nA
TJ = 25°C
TJ = 125°C
100 mA
2 mA
27 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98625A (6/99)
1-2
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