MBM29DL164BD-70PBT 查看數據表（PDF） - Spansion Inc.

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产品描述 (功能)

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MBM29DL164BD-70PBT

FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation

Spansion Inc. 

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20874-7E

FLASH MEMORY

CMOS

16M (2M × 8/1M × 16) BIT Dual Operation

MBM29DL16XTD/BD -70/90

s FEATURES

• 0.33 µm Process Technology

• Simultaneous Read/Write operations (dual bank)

Multiple devices available with different bank sizes (Refer to “MBM29DL16XTD/BD Device Bank Divisions Table”

in sGENERAL DESCRIPTION)

Host system can program or erase in one bank, then immediately and simultaneously read from the other bank

Zero latency between read and write operations

Read-while-erase

Read-while-program

• Single 3.0 V read, program, and erase

Minimizes system level power requirements

s PRODUCT LINE UP

(Continued)

Part No.

Ordering Part No.

VCC

=

3.3

V +0.3 V

–0.3 V

VCC

=

3.0

V +0.6 V

–0.3 V

Max Address Access Time (ns)

Max CE Access Time (ns)

Max OE Access Time (ns)

MBM29DL16XTD/MBM29DL16XBD

70

—

—

90

70

90

70

90

30

35

s PACKAGES

48-pin plastic TSOP (1)

Marking Side

48-pin plastic TSOP (1)

48-ball plastic FBGA

(FPT-48P-M19)

Marking Side

(FPT-48P-M20)

(BGA-48P-M13)

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