NE46134 查看數據表（PDF） - NEC => Renesas Technology
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NE46134 Datasheet PDF : 10 Pages
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NE46100, NE46134
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
30
VCEO Collector to Emitter Voltage
V
15
VEBO Emitter to Base Voltage
V
3
IC
Collector Current
mA
250
PT
TJ
TSTG
Total Power Dissipation
NE461002
NE461343
Junction Temperature
NE46100
NE46134
Storage Temperature
NE46100
NE46134
W
3.75
W
2.0
°C
200
°C
150
°C -65 to +200
°C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Chip mounted on an infinite heat sink (see AN-1001 for handling
instructions).
3. Packaged device mounted on 0.7 mm x 2.5 cm2 double sided
ceramic substrate (copper plating).
TYPICAL PERFORMANCE CURVES (TA=25°C)
NE46134
INSERTION POWER GAIN AND MAXIMUM
AVAILABLE GAIN vs. COLLECTOR CURRENT
VCE = 10 V, f = 1 GHz
10
MAG
8
|S21E| 2
6
4
2
0
0
50
100
300
Collector Current, Ic (mA)
NE46100, NE46134
COLLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IB = 0.6 mA
100
0.5 mA
0.4 mA
80
0.3 mA
60
0.2 mA
40
0.1 mA
20
0
0
10
20
Collector to Emitter Voltage, VCE (V)
NE46134
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
NFOPT
GA
ΓOPT
(GHz)
(dB) (dB) MAG ANG RN/50
VCC = 10 V, IC = 50 mA
0.5
1.5
13.5 0.34
-176
0.09
NE46100, NE46134
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
4.0
3.75
3.0
2.0
NE46134
RTH (J-C)
32.5˚C/W
WITH INFINITE
HEAT SINK
NE46100
RTH (J-C)
30˚C/W
WITH INFINITE
HEAT SINK
NE46134
RTH (J-A)
1.0 312.5˚C/W
WITH INFINITE
HEAT SINK
0.4
0
0
50
100
150
200
85 87.5
Ambient Temperature, TA (°C)
NE46100, NE46134
NOISE FIGURE vs. COLLECTOR CURRENT
VCE = 10 V, f = 1 GHz
5
4
3
2
1
0
5
10
100 200
Collector Current, IC (mA)
RS = RL = 50 Ω Untuned
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