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NTLJS2103PTBG 查看數據表(PDF) - VBsemi Electronics Co.,Ltd

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产品描述 (功能)
生产厂家
NTLJS2103PTBG
VBSEMI
VBsemi Electronics Co.,Ltd VBSEMI
NTLJS2103PTBG Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
NTLJS2103PTBG
P-Channel 20 V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
0.030 at VGS = - 4.5 V
- 20
0.040 at VGS = - 2.5 V
ID (A)
-10a
-9a
Qg (Typ.)
18 nC
DFN 2x2
Top View
S
Bottom View
D
D
D
S
Pin 1
D
D
G
Pin 1
FEATURES
• TrenchFET® Power MOSFET
• Thermally Enhanced DFN2X2
Package
- Small Footprint Area
- Low On-Resistance
APPLICATIONS
• Load Switch, PA Switch, and Battery Switch for Portable
Devices
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 20
V
VGS
± 12
TC = 25 °C
- 10a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
- 8a
- 10b, c
TA = 70 °C
- 8b, c
A
Pulsed Drain Current (t = 300 µs)
IDM
- 30
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 10a
- 2.5b, c
TC = 25 °C
17
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
11
3.3b, c
W
TA = 70 °C
2.1b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TJ, Tstg
- 55 to 150
°C
250
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t5s
RthJA
28
Steady State
RthJC
5.6
38
°C/W
7.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile The DFN2X2 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
E-mail:China@VBsemi TEL:86-755-83251052
1

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