NTLJS2103PTBG 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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NTLJS2103PTBG Datasheet PDF : 9 Pages
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NTLJS2103PTBG
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.060
ID = 6.7 A
0.048
TJ = 150 °C
TJ = 25 °C
10
0.036
0.024
www.VBsemi.tw
TA = 125 °C
TA = 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
0.8
0.7
ID = 250 µA
0.6
0.5
0.012
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
25
20
15
0.4
10
0.3
5
0.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
10
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100 µs
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
Single Pulse
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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