OPB711 查看數據表（PDF） - TT Electronics.
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OPB711 Datasheet PDF : 4 Pages
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Input Diode (see OP168F for additional information)
VF Forward Voltage
-
- 1.7
IR Reverse Current
-
- 100
Output Phototransistor (OPB711—See OP508F for additional information)
Output Photodarlington (OPB712—See OP538F for additional information)
V IF = 20 mA
μA VR = 2 V
V(BR)CEO
Collector-Emitter Breakdown Voltage
OPB711
OPB712
24 -
-
15 -
-
V IC = 100 µA
V(BR)ECO
ICEO
Emitter-Collector Breakdown Voltage
Collector Dark Current
OPB711
OPB712
5
-
-
V IE = 100 µA
-
-
100
nA VCE = 10 V, IF = 0, EE = ≤ 0.1 µW/cm2
-
- 250
Combined
Collector-Emitter Saturation Voltage(1)(2)
VCE(SAT)
OPB711
-
OPB712
-
-
.4
- 1.1
V
IF = 20 mA, IC = 50 µA, d =
0.080” (2.03 mm)
IC(ON)
On-State Collector Current(1)(2)
OPB711
OPB712
.35
20
-
-
4.5
50
mA
mA
IF = 20 mA, VCE = 5 V, d =
0.080” (2.03 mm)
Crosstalk
ICX
OPB711(3)
OPB712(4)
-
-
-
-
100
25
nA
μA
VCE = 5 V, IF = 20 mA (no reflecting
surface)
Notes:
(1) On OPB711, D is the distance from the assembly measurement surface to the reflective surface. On OPB712, D is the distance from
the assembly face to the reflective surface.
(2) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman
Kodak, Catalog #E 152 7795.
(3) Crosstalk (Icx) is the collector current measured with the indicated current in the input diode and with no reflective surface.
(4) All parameters were tested using pulse techniques.
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