MCR16N 查看數據表（PDF） - Kersemi Electronic Co., Ltd.
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MCR16N Datasheet PDF : 6 Pages
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MCR16N
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
Peak Forward On–State Voltage* (ITM = 32 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
Hold Current (Anode Voltage = 12 V, Initiating Current = 200 mA,
Gate Open)
VTM
IGT
VGT
IH
Latch Current
IL
(VD = 12 V, Ig = 200 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Critical Rate of Rise of On–State Current
(IPK = 50 A, Pw = 30 µs, diG/dt = 1 A/µsec, Igt = 50 mA)
v v *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt
di/dt
RθJC
RθJA
TL
Min
—
—
—
2.0
0.5
4.0
—
100
—
1.5
°C/W
62.5
260
°C
Typ
Max
Unit
—
0.01
mA
—
2.0
—
1.7
Volts
10
20
mA
0.65
1.0
Volts
25
40
mA
30
60
mA
300
—
V/µs
—
50
A/µs
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