RSB12WM 查看數據表（PDF） - ROHM Semiconductor
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RSB12WM Datasheet PDF : 7 Pages
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RSB12W M
Transient Voltage Suppressor
●Outline
VRWM
9
V
Ct
1.0
pF
●Features
Ultra Small mold type
Low Capacitance
Bidirectional
●Inner Circuit
Data sheet
●Application
Surge Protection
●Structure
Silicon Epitaxial Planar
●Absolute Maximum Ratings (Ta = 25ºC)
Parameter
Symbol
Power dissipation
PD
Junction temperature
Tj
Storage temperature
Tstg
ESD capability
VESD
●Packaging Specifications
Packing
Embossed Tape
Reel Size(mm)
180
Taping Width(mm)
8
Basic Ordering Unit(pcs)
3000
Taping Code
TL
Marking
7D
Conditions
-
-
-
IEC61000-4-2
Air
Contact
*IEC61000-4-2
Min. Max. Unit
- 150 mW
- 150 ℃
-55 150 ℃
- ±15 kV
- ±8 kV
C=150pF R=330Ω
●Characteristics (Ta = 25ºC)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Reverse Stand-off voltage
VRWM
-
- - 9V
Breakdown voltage
VBR
IT=5mA
9.6 - 14.4 V
Reverse current
IR
VR=9V
- - 0.1 μA
Capacitance between terminals
Ct
VR=0V f=1MHz
- 1.0 - pF
Breakdown voltage (VBR) time is 40ms .
(3)pin OPEN.
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2018/07/11_Rev.001
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