SFH4860 查看數據表（PDF） - OSRAM GmbH

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SFH4860

GaAlAs Light Emitting Diode (660 nm)

OSRAM GmbH 

2015-12-23

GaAlAs Light Emitting Diode (660 nm)

Version 1.3

SFH 4860

Features:

• Fabricated in a liquid phase epitaxy process

• Cathode is electrically connected to the case

• High reliability

• Spectral match with silicon photodetectors

• Hermetically sealed package

Applications

• Photointerrupters

• IR remote control

• Sensor technology

• Light curtains

Notes

Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which

can be hazardous to the human eye. Products which incorporate these devices have to follow the safety

precautions given in IEC 60825-1 and IEC 62471.

Ordering Information

Type:

SFH 4860

Radiant Intensity

Ie [mW/sr]

IF = 50 mA, tp = 20 ms

1.3 (≥ 0.63)

Ordering Code

Q62702P5053

Note:

18 A3 DIN 870 (TO-18), flat glass cap, lead spacing 2.54 mm (1/10’’) anode making: projection at package

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2015-12-23

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