STTA212S 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STTA212S

TURBOSWITCH™ ULTRA-FAST HIGH VOLTAGE DIODE

STMicroelectronics 

STTA212S

THERMAL AND POWER DATA

Symbol

Rth(j-I)

P1

Parameter

Junction to lead thermal resistance

Conduction power dissipation

Pmax

Total power dissipation

Pmax = P1 + P3 (P3 = 10% P1)

Test conditions

IF(AV) = 1.5A δ = 0.5

Tlead= 72°C

Tlead= 67°C

Value

21

2.5

2.8

Unit

°C/W

W

W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameter

VF * Forward voltage drop

IR ** Reverse leakage current

Vto Threshold voltage

rd

Dynamic resistance

Test pulses : * tp = 380 µs, δ < 2%

** tp = 5 ms , δ < 2%

Test Conditions

IF = 2A

Tj = 25°C

Tj = 125°C

VR = 0.8 Tj = 25°C

x VRRM Tj = 125°C

Ip < 3.IAV Tj = 125°C

Min Typ Max Unit

1.65 V

1.1 1.5

20 µA

150 400

1.15 V

175 mΩ

To evaluate the maximum conduction losses use the following equation :

P = Vto x IF(AV) + rd x IF2(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

TURN-OFF SWITCHING

Symbol

Parameter

Test conditions

Min Typ Max Unit

trr

Reverse recovery Tj = 25°C

time

IF = 0.5 A IR = 1A Irr = 0.25A

IF = 1 A dIF/dt =-50A/µs VR = 30V

IRM

Maximum recovery Tj = 125°C VR = 600V IF = 2A

current

dIF/dt = -16 A/µs

dIF/dt = -50 A/µs

ns

65

115

A

3.6

6.0

S factor Softness factor

Tj = 125°C VR = 600V IF = 2A

dIF/dt = -50 A/µs

0.9

/

TURN-ON SWITCHING

Symbol

tfr

VFp

Parameter

Forward recovery time

Peak forward voltage

Test conditions

Min Typ Max Unit

Tj = 25°C

IF = 2 A

dIF/dt = 16 A/µs

measured at 1.1 × VFmax

900 ns

35

V

2/8

Share Link: