STTA212S 查看數據表（PDF） - STMicroelectronics
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STTA212S Datasheet PDF : 8 Pages
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STTA212S
Fig. 1: Conduction losses versus average current.
P1(W)
3.0
2.5
δ=0.1
δ=0.5
δ=0.2
δ=1
2.0
1.5
1.0
0.5
IF(av) (A)
0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Fig. 2: Forward voltage drop versus forward
current (maximum values).
IFM(A)
5E+1
1E+1
Tj=125°C
1E+0
1E-1
VFM(V)
1E-2
0
1
2
3
4
5
Fig. 3: Variation of thermal impedance junction to
ambient versus pulse duration (epoxy printed cir-
cuit board FR4, e(Cu)=35µm, S(Cu)=1cm2).
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence).
Zth(j-a)(°C/W)
100
10
1
1E-2
1E-1
tp(s)
1E+0
1E+1
1E+2 5E+2
IRM(A)
20
VR=600V
15
Tj=125°C
IF=2*IF(av)
10
IF=IF(av)
5
dIF/dt(A/ µs)
0
0 20 40 60 80 100 120 140 160 180 200
Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical Fig. 6: Reverse recovery time versus dIF/dt (90%
values).
confidence).
S factor
1.20
IF<2*IF(av)
1.00
VR=600V
Tj=125°C
0.80
0.60
0
dIF/dt(A/ µs)
20 40 60 80 100 120 140 160 180 200
trr(ns)
400
350
300
VR=600V
Tj=125°C
250
IF=2*IF(av)
200
150
IF=IF(av)
100
50
dIF/dt(A/ µs)
0
0 20 40 60 80 100 120 140 160 180 200
3/8
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