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STTA9012TV2 查看數據表(PDF) - STMicroelectronics

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STTA9012TV2
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTA9012TV2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STTA9012TV1/2
THERMAL AND POWER DATA (per diode)
Symbol
Parameter
Rth(j-c) Junction to case thermal resistance
P1
Conduction power dissipation
Pmax
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Test conditions
Per diode
Total
Coupling
IF(AV) = 45A δ =0.5
Tc= 70°C
Tc= 62°C
Value
0.85
0.48
0.1
94
104
Unit
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto Threshold voltage
Rd
Dynamic resistance
Test pulses : * tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test conditions
IF =45A Tj = 25°C
Tj = 125°C
VR =0.8 x Tj = 25°C
VRRM
Tj = 125°C
Ip < 3.IAV Tj = 125°C
Min Typ Max Unit
2.05 V
1.3 1.85
200 µA
3
12 mA
1.57 V
6 m
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
trr
Reverse recovery
time
IRM
Maximum reverse
recovery current
S factor Softness factor
Test conditions
Min Typ Max Unit
Tj = 25°C
IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
ns
65
115
Tj = 125°C VR = 600V IF =45A
dIF/dt = -360 A/µs
dIF/dt = -500 A/µs
A
60
50
Tj = 125°C VR = 600V IF =45A
-
dIF/dt = -500 A/µs
1.2
TURN-ON SWITCHING
Symbol
Parameter
tfr
Forward recovery time
VFp Peak forward voltage
Test conditions
Min Typ Max Unit
Tj = 25°C
IF =45 A, dIF/dt = 360 A/µs
measured at 1.1 × VFmax
ns
900
Tj = 25°C
IF =45A, dIF/dt = 360 A/µs
IF =45A, dIF/dt = 500 A/µs
V
30
30
2/8

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