DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STTA9012TV2 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STTA9012TV2
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STTA9012TV2 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Fig. 1: Conduction losses versus average current
(per diode).
P1(W)
100
80
60
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
40
T
20
IF(av) (A)
δ=tp/T
tp
0
0 5 10 15 20 25 30 35 40 45 50
STTA9012TV1/2
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
500
Tj=125°C
100
10
VFM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 3: Relative variation of thermal impedance Fig. 4: Peak reverse recovery current versus dIF/dt
junction to case versus pulse duration (per diode). (90% confidence, per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
1E+0 5E+0
IRM(A)
80
70
VR=600V
Tj=125°C
60
50
40
30
20
10
0
0
100
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
200
300
400
500
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
trr(ns)
1000
800
600
400
200
0
0
100
VR=600V
Tj=125°C
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
200
300
400
500
S factor
1.60
1.40
IF<2*IF(av)
VR=600V
1.20
1.00
0.80
0.60
0
100
dIF/dt(A/µs)
200
300
Tj=125°C
400
500
3/8

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]