DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STTH6010-Y 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
STTH6010-Y Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Characteristics
1
Characteristics
STTH6010-Y
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Operating junction temperature range
1000
V
80
A
Tc = 75 °C, = 0.5, square wave
60
A
tp = 5 µs, F = 5 kHz square
450
A
tp = 10 ms sinusoidal
400
A
-65 to + 175
°C
-40 to + 175
°C
Symbol
Rth(j-c) Junction to case
Table 3. Thermal parameters
Parameter
Value
0.78
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, < 2%
2. Pulse test: tp = 380 µs, < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
VR = VRRM
IF = 60 A
Min. Typ. Max. Unit
-
20
µA
- 20 200
-
2.0
-
1.4 1.8
V
- 1.3 1.7
To evaluate the conduction losses use the following equation:
P = 1.3 x IF(AV) + 0.0067 IF2(RMS)
2/9
DocID018924 Rev 2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]