STTH6010-Y 查看數據表（PDF） - STMicroelectronics

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STTH6010-Y

Automotive ultrafast recovery - high voltage diode

STMicroelectronics 

STTH6010-Y

Symbol

Parameter

Table 5. Dynamic characteristics

Test conditions

trr Reverse recovery time

IRM Reverse recovery current

S Softness factor

tfr Forward recovery time

VFP Forward recovery voltage

IF = 1 A, dlF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dlF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dlF/dt = -200 A/µs,

VR = 30 V, Tj = 25 °C

IF = 60 A, dlF/dt = -200 A/µs,

VR = 600 V, Tj = 125 °C

IF = 60 A, dlF/dt = -200 A/µs,

VR = 600 V, Tj = 125 °C

IF = 60 A, dlF/dt = 100 A/µs,

VFR = 1.5 x VFmax, Tj = 25 °C

IF = 60 A, dlF/dt = 100 A/µs,

Tj = 25 °C

Characteristics

Min. Typ. Max. Unit

-

115

-

61 80 ns

-

49 65

-

31 40 A

-

1

-

750 ns

-

4

V

Figure 1. Conduction losses versus average Figure 2. Forward voltage drop versus forward

current

current

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