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SWD50N06V 查看數據表(PDF) - Xian Semipower Electronic Technology Co., Ltd.

零件编号
产品描述 (功能)
生产厂家
SWD50N06V
SEMIPOWER
Xian Semipower Electronic Technology Co., Ltd. SEMIPOWER
SWD50N06V Datasheet PDF : 6 Pages
1 2 3 4 5 6
SW50N06V
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Off characteristics
BVDSS Drain to source breakdown voltage
Test conditions
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
VDS=60V, VGS=0V
VDS=48V, TC=125oC
Gate to source leakage current, forward VGS=20V, VDS=0V
IGSS
Gate to source leakage current, reverse VGS=-20V, VDS=0V
On characteristics
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 25A
VDS = 10 V, ID = 25A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=30V, ID=50A, RG=25Ω
(note 4,5)
VDS=50V, VGS=10V, ID=50A
(note 4,5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
VSD Diode forward voltage drop.
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=50A, VGS=0V
IS=50A, VGS=0V,
dIF/dt=100A/us
. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L = 6.3mH, IAS = 8A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤50A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5. Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Min. Typ. Max. Unit
60
V
0.04
V/oC
1
uA
50 uA
100 nA
-100 nA
1.2
2.5 V
10
13 mΩ
149
S
2340
154
pF
120
10
47
nS
131
112
43
3.5
nC
16
Min. Typ. Max. Unit
50 A
200 A
1.4 V
13
nS
5.24
nC
Oct. 2015. Rev. 3.0
2/6

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