VG26S17400FJ-6 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17400FJ-6

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor  

VIS

DC Characteristics ; 3.3 - Volt Verion

(Ta = 0 to 70°C, VCC = + 3.3V(+10%,-5%), Vss = 0V)

Parameter

Symbol

Test Conditions

Operating

current

Low

power

S - version

Standby Standard

Current power

version

RAS - only

refresh current

Fast page mode

current

CAS - before - RAS

refresh current

Self - refresh currant

(S - Version)

CAS - before - RAS

long refresh

current (S - Version)

RAS cycling

ICC1 CAS cycling

tRC = min.

LVTTL interface

RAS, CAS = VIH

Dout = high - Z

CMOS interface

RAS, CAS ≥ VCC - 0.2V

Dout = high - Z

ICC2 LVTTL interface

RAS, CAS = VIH

Dout = high - Z

CMOS interface

RAS, CAS ≥ VCC - 0.2V

Dout = high - Z

ICC3 RAS cycling, CAS = VIH

tRC = min.

ICC4

tPC = min.

ICC5 tRC = min.

RAS, CAS cycling

ICC8 tRASS ≥ 100µS

ICC9 Standby : VCC - 0.2V ≤ RAS

CAS before RAS refresh :

2048 cycles/128ms

RAS, RAS : 0V ≤ VIL ≤ 0.2V

VCC - 0.2V ≤ VIH ≤ VIH (Max)

Dout = high - Z, tRAS ≤ 300ns

VG26(V)(S)17400FJ

4,194,304 x 4 - Bit

CMOS Dynamic RAM

VG26 (V) (S) 17400E

-5

-6

Unit Notes

Min Max Min Max

- 145 - 135 mA 1, 2

- 0.5

- 0.5

mA

- 0.15

- 0.15

mA

-2-2

mA

- 0.5

- 0.5

mA

- 145

- 100

- 145

- 250

- 300

- 135

1, 2

mA

- 90

1,3

mA

- 135

1, 2

mA

- 250 µA

- 300 µA

Document :

Rev.

Page 8

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