UPA834TF(1999) 查看數據表（PDF） - NEC => Renesas Technology
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UPA834TF Datasheet PDF : 10 Pages
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UPA834TF
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
Q1 Q2
VCBO Collector to Base Voltage
V
20 20
VCEO Collector to Emitter Voltage V
10 12
VEBO Emitter to Base Voltage
V
1.5 3
IC
Collector Current
mA
65 100
PT
Total Power Dissipation
mW 150 150
2002
TJ
Junction Temperature
°C
150 150
TSTG Storage Temperature
°C -65 to +150
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
2. When operating both devices, the power dissipation for
either device should not exceed 110 mW.
TYPICAL PERFORMANCE CURVES (TA = 25˚C)
Q1
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Q1+ Q2 total
Free Air
200
Q1 when using 1 element
Q1 when using
2 elements
100
0
50
100
150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
160 µA
140 µA
15
120 µA
100 µA
10
80 µA
60 µA
5
40 µA
lB=20 µA
0
0.5
1.0
Collector to Emitter Voltage, VCE (V)
Q2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Q1 + Q2 total
Free Air
200
Q2 when using 1 element
Q2 when using
2 elements
100
0
50
100
150
Ambient Temperature, TA (°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
lB=160 µA
140 µA
20
120 µA
15
100 µA
80 µA
10
60 µA
40 µA
5
20 µA
0
5
10
Collector to Emitter Voltage, VCE (V)
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