UPA836TD 查看數據表（PDF） - NEC => Renesas Technology

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UPA836TD

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD

NEC => Renesas Technology 

Q1

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

VCE = 1 V

f = 1 GHz

20

MSG

MAG

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

VCE = 1 V

f = 2 GHz

20

15 MSG

10

MAG

5

|S21e|2

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

25

VCE = 1 V

f = 4 GHz

20

15

10

MAG

5

|S21e|2

0

1

10

100

Collector Current IC (mA)

µPA836TD

Q2

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20 VCE = 1 V

f = 1 GHz

MSG

MAG

15

|S21e|2

10

5

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

20 VCE = 1 V

f = 2 GHz

15

MSG

10

MAG

5

|S21e|2

0

1

10

100

Collector Current IC (mA)

INSERTION POWER GAIN, MAG, MSG

vs. COLLECTOR CURRENT

10 VCE = 1 V

f = 4 GHz

5

MAG

0

|S21e|2

–5

–10

1

10

100

Collector Current IC (mA)

Data Sheet P15358EJ1V0DS

11

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