PN4391 查看數據表（PDF） - Philips Electronics
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PN4391 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
PN4391 to 4393
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source on-resistance
VDS = 0 V; VGS = 0; f = 1 kHz; Ta = 25 °C
Input capacitance
VDS = 20 V; VGS = 0; f = 1 MHz; Ta = 25 °C
Feedback capacitance
VDS = 0; −VGS = 12 V
VDS = 0; −VGS = 7 V
VDS = 0; −VGS = 5 V
Switching times
f = 1 MHz
test conditions
VDD = 10 V; VGS = 0 to VGS off
Rise time
Turn-on time
Fall time
Turn-off time
PN4391 PN4392 PN4393
RDS on max.
Ciss
max.
Crss
max.
Crss
max.
Crss
max.
30
60
100 Ω
16
16
16 pF
5
pF
5
pF
5 pF
ID
−VGS off
RL
tr
ton
tf
toff
=
=
=
max.
max.
max.
max.
12
6.0
3.0 mA
12
7.0
5.0 V
750
1550
3150 Ω
5
5
5 ns
15
15
15 ns
15
20
30 ns
20
35
50 ns
ok, halfpage
VDD
10 nF
50 Ω
10 µF
50 Ω
1 µF
RL
DUT
SAMPLING
SCOPE
50 Ω
MBK289
VGS = 0 V
Vi
−VGS off
10%
90%
90%
Vo
10%
toff
tf
ton
tr
MBK288
Fig.2 Switching times test circuit.
April 1989
Fig.3 Input and output waveforms.
4
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