PSMN030-150B 查看數據表（PDF） - NXP Semiconductors.

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PSMN030-150B

N-channel TrenchMOS SiliconMAX standard level FET

NXP Semiconductors. 

NXP Semiconductors

PSMN030-150B

N-channel TrenchMOS SiliconMAX standard level FET

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance from

junction to mounting base

thermal resistance from

junction to ambient

Conditions

minimum footprint ; FR4 board

Min Typ Max Unit

-

-

0.6 K/W

-

50 -

K/W

1

Zth(j-mb)

(K/W)

δ = 0.5

10−1 0.2

0.1

0.05

0.02

P

10−2

single pulse

003aaf141

tp

δ=

T

10−3

10−6

10−5

10−4

10−3

tp

t

T

10−2

10−1

1

tp (s)

Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

PSMN030-150B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 02 — 13 December 2010

© NXP B.V. 2010. All rights reserved.

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