M5M5256DFP-70G 查看數據表（PDF） - Renesas Electronics
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M5M5256DFP-70G Datasheet PDF : 8 Pages
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RENESAS LSIs
M5M5256DFP,VP -70G,-70GI,-70XG
262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS
(1) READ CYCLE
Symbol
Parameter
tCR
ta(A)
ta(S)
ta(OE)
tdis(S)
tdis(OE)
ten(S)
ten(OE)
tV(A)
Read cycle time
Address access time
Chip select access time
Output enable access time
Output disable time after /S high
Output disable time after /OE high
Output enable time after /S low
Output enable time after /OE low
Data valid time after address
Limits1
Vcc=3.3±0.3V
Min Max
70
70
70
35
25
25
5
5
10
Limits2
Vcc=5.0±0.5V
Min Max
70
70
70
35
25
25
5
5
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE
Symbol
Parameter
tCW
Write cycle time
tw(W) Write pulse width
tsu(A) Address setup time
tsu(A-WH)Address setup time with respect to /W high
tsu(S) Chip select setup time
tsu(D) Data setup time
th(D) Data hold time
trec(W) Write recovery time
tdis(W) Output disable time from /W low
tdis(OE) Output disable time from /OE high
ten(W) Output enable time from /W high
ten(OE) Output enable time from /OE low
Limits1
Vcc=3.3±0.3V
Min Max
70
55
0
65
65
30
0
0
25
25
5
5
Limits2
Vcc=5.0±0.5V
Min Max
70
50
0
65
65
30
0
0
25
25
5
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4
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