SM3016NSU 查看數據表（PDF） - Unspecified

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SM3016NSU

N-Channel Enhancement Mode MOSFET

Unspecified 

SM3016NSU

®

Electrical

Characteristics

(Cont.)

(T

A

=

25°C

unless

otherwise

noted)

Symbol

Parameter

Test Conditions

Diode Characteristics

VSD b Diode Forward Voltage

trr Reverse Recovery Time

ISD=20A, VGS=0V

ta Charge Time

tb Discharge Time

Qrr Reverse Recovery Charge

Dynamic Characteristics c

IF=20A, dlSD/dt=100A/µs

RG Gate Resistance

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(ON) Turn-on Delay Time

tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

tf Turn-off Fall Time

Gate Charge Characteristics c

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=15V,

Frequency=1.0MHz

VDD=15V, RL=15Ω,

IDS=1A, VGEN=10V,

RG=6Ω

Qg Total Gate Charge

VDS=15V, VGS=4.5V,

ID S= 30A

Qg Total Gate Charge

Qgth Threshold Gate Charge

Qgs Gate-Source Charge

VDS=15V, VGS=10V,

ID S= 30A

Qgd Gate-Drain Charge

Note b ：Pulse test ; pulse width≤300µs, duty cycle≤2%.

Note c ：Guaranteed by design, not subject to production testing.

Min.

-

-

-

-

-

2.1

1344

175

96

-

-

-

-

-

-

-

-

-

Typ.

0.8

14

7.5

6.5

6

2.6

1680

250

160

14

11

51

17

14

31

1.4

2.8

8

Max.

1.1

-

-

-

-

3.1

2016

325

224

21

16

75

25

20

43

2

3.9

11.2

Unit

V

ns

nC

Ω

pF

ns

nC

Copyright © Sinopower Semiconductor, Inc.

3

Rev. A.3 - January, 2015

www.sinopowersemi.com

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