3SK309 查看數據表（PDF） - Hitachi -> Renesas Electronics

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3SK309

GaAs N Channel Dual Gate MES FET UHF RF Amplifier

Hitachi -> Renesas Electronics 

3SK309

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate 1 to source voltage

Gate 2 to source voltage

Drain current

Channel power dissipation

Channel temperature

Storage temperature

Symbol

VDS

VG1S

VG2S

ID

Pch

Tch

Tstg

Ratings

Unit

6

V

–4

V

–4

V

18

mA

100

mW

125

°C

–55 to +125

°C

Electrical Characteristics (Ta = 25°C)

Item

Gate 1 to cutoff current

Symbol Min Typ

I G1SS

—

—

Gate 2 to cutoff current

I G2SS

—

—

Gate 1 to source cutoff voltage VG1S(off) –0.2 —

Gate 2 to source cutoff voltage VG2S(off) –0.2 —

Zero gate voltege drain current IDSS

25

40

Forward transfer admittance |yfs|

30

40

Power gain

Noise figure

Power gain

Noise figure

Note: Marking is “XV–”

PG

18

21

NF

—

1.25

PG

—

20

NF

—

1.3

Max

–20

–20

–1.5

–1.5

60

—

—

1.5

—

—

Unit

µA

µA

V

V

mA

mS

dB

dB

dB

dB

Test conditions

VG1S = –4 V

VG2S = VDS = 0

VG2S = –4 V

VG1S = VDS = 0

VDS = 3 V, VG2S = 0

ID = 100 µA

VDS = 3 V, VG1S = 0

ID = 100 µA

VDS = 3 V, VG1S = 0

VG2S = 0

VDS = 3 V, VG2S = 0

ID = 5 mA, f = 1 kHz

VDS = 3 V, VG2S = 0

ID = 5 mA, f = 900 MHz

VDS = 1.5 V, VG2S = 0

ID = 3 mA, f = 900 MHz

2

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