VS-12TTS08-M3 查看數據表（PDF） - Vishay Semiconductors
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VS-12TTS08-M3 Datasheet PDF : 7 Pages
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www.vishay.com
VS-12TTS08-M3
Vishay Semiconductors
High Voltage Phase Control Thyristor, 12 A
2
(A)
3L TO-220AB
1 (K) (G) 3
PRIMARY CHARACTERISTICS
IT(AV)
VDRM/VRRM
VTM
IGT
TJ
Package
8A
800 V
1.2 V
15 mA
-40 °C to 125 °C
3L TO-220AB
Circuit configuration
Single SCR
FEATURES
• Designed and qualified according to
JEDEC®-JESD 47
• 125 °C max. operating junction temperature
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
and AC switch in motor control, UPS, welding, and battery
charge.
DESCRIPTION
The VS-12TTS08... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
Capacitive input filter
TA = 55 °C, TJ = 125 °C,
13.5
common heatsink of 1 °C/W
THREE-PHASE BRIDGE
17
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
IT(RMS)
VDRM/VRRM
ITSM
VT
dV/dt
Sinusoidal waveform
8 A, TJ = 25 °C
dI/dt
TJ
Range
VOLTAGE RATINGS
PART NUMBER
VS-12TTS08-M3
VRRM, MAXIMUM
PEAK VOLTAGE
V
800
VALUES
8
12.5
800
110
1.2
150
100
-40 to +125
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
800
UNITS
A
V
A
V
V/µs
A/µs
°C
IRRM/IDRM
AT 125 °C
mA
1.0
Revision: 21-Aug-17
1
Document Number: 96286
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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