SM12T1(2017) 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

SM12T1
(Rev.:2017)

ESD Protection Diode Array

ON Semiconductor 

SM12T1

MAXIMUM RATINGS

Rating

Peak Power Dissipation @ 20 ms (Note 1)

@ TL ≤ 25°C

IEC 61000−4−2 (ESD)

IEC 61000−4−4 (EFT)

IEC 61000−4−5 (Lightening)

Total Power Dissipation on FR−5 Board (Note 2) @ TA = 25°C

Derate above 25°C

Thermal Resistance Junction to Ambient

Total Power Dissipation on Alumina Substrate (Note 3) @ TA = 25°C

Derate above 25°C

Thermal Resistance Junction to Ambient

Junction and Storage Temperature Range

Lead Solder Temperature − Maximum (10 Second Duration)

1. Non−repetitive current pulse per Figure 3

2. FR−5 = 1.0 x 0.75 x 0.62 in.

3. Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina

*Other voltages may be available upon request

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol

Parameter

IPP

VC

VRWM

IR

VBR

IT

QVBR

IF

VF

ZZT

IZK

ZZK

Maximum Reverse Peak Pulse Current

Clamping Voltage @ IPP

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ VRWM

Breakdown Voltage @ IT

Test Current

Maximum Temperature Coefficient of VBR

Forward Current

Forward Voltage @ IF

Maximum Zener Impedance @ IZT

Reverse Current

Maximum Zener Impedance @ IZK

Symbol

Ppk

Air

Contact

°PD°

RθJA

°PD°

RθJA

TJ, Tstg

TL

Value

300

±15

±8.0

40

12

225

1.8

556

300

2.4

417

− 55 to +150

260

I

IF

VC VBR VRWM

IIRT VF

IPP

Uni−Directional

Unit

Watts

kV

A

A

°mW°

mW/°C

°C/W

°mW

mW/°C

°C/W

°C

°C

V

ELECTRICAL CHARACTERISTICS

Device

Device

Marking

VRWM

(Volts)

IR @ VRWM

(mA)

SM12T1

12M

12

1.0

4. 8 × 20 ms pulse waveform per Figure 3

VBR, Breakdown Voltage

(Volts)

Min

Max

13.3

15.75

VC @

IPP = 1 Amp

(Volts)

19

Max IPP

(Note 4)

(Amps)

12

Typical Capacitance

(pF)

Pin 1 to 3 @ 0 Volts

95

www.onsemi.com

2

Share Link: