SM12T1(2017) 查看數據表（PDF） - ON Semiconductor
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SM12T1 Datasheet PDF : 7 Pages
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SM12T1
TYPICAL CHARACTERISTICS
10
300
250
ALUMINA SUBSTRATE
1
200
150
0.1
0.01
0.1
1
10
100
tp, PULSE DURATION (ms)
1000
Figure 1. Non−Repetitive Peak Pulse Power
versus Pulse Time
100
FR−5 BOARD
50
0
0
25
50 75 100 125 150 175
TEMPERATURE (°C)
Figure 2. Steady State Power Derating Curve
100
90 tr
80
70
60
100
PEAK VALUE IRSM @ 8 ms
90
PULSE WIDTH (tP) IS DEFINED
80
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
70
60
50
HALF VALUE IRSM/2 @ 20 ms
50
40
40
30
tP
30
20
20
10
0
0
20
40
60
t, TIME (ms)
10
0
80
0
1
5
8
12
BIAS VOLTAGE (VOLTS)
Figure 3. 8 × 20 ms Pulse Waveform
Figure 4. Typical Diode Capacitance
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