T1081N60TOHXPSA1 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

T1081N60TOHXPSA1

Phase Control Thyristor

Infineon Technologies 

Technische Information /

technical information

Netz-Thyristor

Phase Control Thyristor

T1081N

Elektrische Eigenschaften / electrical properties

Höchstzulässige Werte / maximum rated values

Elektrische Eigenschaften Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C... Tvj max

repetitive peak forward off-state and reverse voltage

VDRM,VRRM

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Kritische Stromsteilheit

critical rate of rise of on-state current

Kritische Spannungssteilheit

critical rate of rise of off-state voltage

TC = 85 °C

ITRMSM

TC = 85 °C

TC = 70 °C

TC = 55 °C

Tvj = 25 °C, tP = 10 ms

Tvj = Tvj max, tP = 10 ms

Tvj = 25 °C, tP = 10 ms

Tvj = Tvj max, tP = 10 ms

DIN IEC 60747-6

f = 50 Hz, iGM = 3 A, diG/dt = 6 A/µs

Tvj = Tvj max, vD = 0,67 VDRM

5.Kennbuchstabe / 5th letter H

ITAVM

ITSM

I²t

(diT/dt)cr

(dvD/dt)cr

6000 V

6500 V

7000 V

2040 A

1300 A

1560 A

1800 A

35000 A

34000 A

6120 10³ A²s

5780 10³ A²s

300 A/µs

2000 V/µs

Charakteristische Werte / characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlaßkennlinie

on-state characteristic

200A  iF  2500A

Tvj = Tvj max , iT = 2000A

Tvj = Tvj max

Tvj = Tvj max

Tvj = Tvj max

vT

V(TO)

rT

typ.

v T  A  B  iT  C  Ln ( iT  1)  D  iT

max.

Zündstrom

gate trigger current

Zündspannung

gate trigger voltage

Nicht zündender Steuerstrom

gate non-trigger current

Nicht zündende Steuerspannung

gate non-trigger voltage

Haltestrom

holding current

Einraststrom

latching current

Vorwärts- und Rückwärts-Sperrstrom

forward off-state and reverse current

Zündverzug

gate controlled delay time

Tvj = 25°C, vD = 12 V

IGT

Tvj = 25°C, vD = 12 V

VGT

Tvj = Tvj max , vD = 12 V

Tvj = Tvj max , vD = 0,5 VDRM

Tvj = Tvj max , vD = 0,5 VDRM

IGD

VGD

Tvj = 25°C, vD = 12 V

IH

Tvj = 25°C, vD = 12 V, RGK ≥ 10 Ω

iGM = 3 A, diG/dt = 6 A/µs, tg = 20 µs

Tvj = Tvj max

vD = VDRM, vR = VRRM

DIN IEC 60747-6

Tvj = 25 °C,iGM = 3 A, diG/dt = 6 A/µs

IL

iD, iR

tgd

prepared by: TM

approved by: JP

date of publication: 2011-05-02

revision:

8.0

typ. 2,55 V

Max. 2,7 V

typ. 1,12 V

max. 1,18 V

typ. 0,714 mΩ

Max. 0,759 mΩ

A 0,00017

B 0,000408

C 0,159

D 0,0117

A 0,00016

B 0,000509

C 0,184

D 0,00634

max. 350 mA

max. 2,5 V

max.

max.

max.

20 mA

10 mA

0,4 V

max. 350 mA

max.

3A

max. 400 mA

max.

2 µs

Date of Publication: 2011-05-02

Revision: 8.0

Seite/page: 2/11

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