LTC6990 查看數據表（PDF） - Analog Devices
零件编号
产品描述 (功能)
生产厂家
LTC6990 Datasheet PDF : 30 Pages
| |||
LTC6990
ELECTRICAL CHARACTERISTICS
Note 11: Long-term drift of silicon oscillators is primarily due to the
movement of ions and impurities within the silicon and is tested at 30°C
under otherwise nominal operating conditions. Long-term drift is specified
as ppm/√kHr due to the typically nonlinear nature of the drift. To calculate
drift for a set time period, translate that time into thousands of hours, take
the square root and multiply by the typical drift number. For instance, a
year is 8.77kHr and would yield a drift of 266ppm at 90ppm/√kHr. Drift
without power applied to the device may be approximated as 1/10th of the
drift with power, or 9ppm/√kHr for a 90ppm/√kHr device.
TYPICAL PERFORMANCE CHARACTERISTICS V+ = 3.3V, unless otherwise noted.
Frequency Error vs RSET
4
TA = 25°C
3
GUARANTEED MAX
OVER TEMPERATURE
2
1
TYPICAL MAX
0
90% OF UNITS
–1
TYPICAL MIN
–2
GUARANTEED MIN
–3
OVER TEMPERATURE
–4
10
100
RSET (kΩ)
1000
6990 G01
Frequency Error
vs Supply Voltage
0.5
TA = 25°C
0.4
0.3
0.2
RSET = 800k
0.1
0
–0.1
RSET = 200k
–0.2
RSET = 50k
–0.3
–0.4
–0.5
2
3
4
5
SUPPLY VOLTAGE (V)
6
6990 G02
Frequency Error vs Temperature
1.5 V+ = 3.3V
DIVCODE = 4
1.0
0.5
RSET = 50k
0.0
RSET = 800k
–0.5
RSET = 267k
–1.0
–1.5
–50 –25
0 25 50 75
TEMPERATURE (°C)
100 125
6990 G03
VSET vs ISET
1.003 V+ = 3.3V
TA = 25°C
1.002
VSET vs Supply Voltage
1.003
RSET = 200k
TA = 25°C
1.002
1.001
1.001
1.000
0
10
20
30
40
ISET (µA)
6990 G04
1.000
2
3
4
5
SUPPLY VOLTAGE (V)
6
6990 G05
VSET vs Temperature
1.020
RSET = 200k
1.015 3 TYPICAL PARTS
1.010
1.005
1.000
0.995
0.990
0.985
0.980
–50 –25
0 25 50 75
TEMPERATURE (°C)
100 125
6990 G06
Rev. D
For more information www.analog.com
5
Share Link: 