S2409 查看數據表（PDF） - ROHM Semiconductor

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S2409

N-channel SiC power MOSFET bare die

ROHM Semiconductor 

S2409

N-channel SiC power MOSFET bare die

VDSS

RDS(on) (Typ.)

ID

1700V

100mW

34A*1

lFeatures

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

lInner circuit

Datasheet

(1) Gate

(2) Drain

(3) Source

*1 Body Diode

lApplication

・Solar inverters

・DC/DC converters

・Switch mode power supplies

・Induction heating

・Motor drives

lAbsolute maximum ratings (Ta = 25°C)

Parameter

Drain - Source voltage

Continuous drain current

Pulsed drain current

Tc = 25°C

Gate - Source voltage (DC)

Gate - Source surge voltage (tsurge < 300nsec)

Junction temperature

Range of storage temperature

Symbol

Value

Unit

VDSS

1700

V

ID *1

34

A

ID,pulse *2

80

A

VGSS

-6 to 22

V

VGSS_surge*3

-10 to 26

V

Tj

175

°C

Tstg

-55 to +175

°C

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2017.01 - Rev.A

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