S2409 查看數據表（PDF） - ROHM Semiconductor

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S2409

N-channel SiC power MOSFET bare die

ROHM Semiconductor 

S2409

Datasheet

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = 1mA

1700

-

-

V

Zero gate voltage

drain current

VDS = 1700V, VGS = 0V

IDSS Tj = 25°C

-

Tj = 150°C

-

Gate - Source leakage current

IGSS+ VGS = +22V, VDS = 0V

-

Gate - Source leakage current

IGSS- VGS = -6V, VDS = 0V

-

Gate threshold voltage

VGS (th) VDS = VGS, ID = 4.7mA

1.6

Static drain - source

on - state resistance

VGS = 18V, ID = 13A

RDS(on) *4 Tj = 25°C

-

Tj = 125°C

-

Gate input resistance

RG f = 1MHz, open drain

-

1

10

mA

2

-

-

100 nA

-

-100 nA

2.8 4.0

V

100 125 mW

145

-

9

-

W

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