BAS35 查看數據表（PDF） - SHIKE Electronics
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BAS35 Datasheet PDF : 3 Pages
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BAS29 BAS31 BAS35
Silicon Epitaxial Planar Switching Diodes
BAS29
3
BAS31
3
BAS35
3
12
12
12
BAS29 Marking Code: L20
BAS31 Marking Code: L21
BAS35 Marking Code: L22
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
VRRM
120
V
Maximum Average Forward Current
IF(AV)
200
mA
Repetitive Peak Forward Current
IFRM
600
mA
Non-Repetitive Peak Forward Surge Current
t = 1 µs
t=1s
IFSM
2
1
A
Power Dissipation
Ptot
350
mW
Junction Temperature
Tj
150
OC
Storage Temperature Range
Tstg
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
at IF = 50 mA
at IF = 100 mA
at IF = 200 mA
at IF = 400 mA
Reverse Current
at VR = 90 V
at VR = 90 V, TJ = 150 OC
Reverse Breakdown Voltage
at IR = 1 mA
Total Capacitance
at VR = 0 V, f = 1 MHz
Reverse Recovery Time
at IF = IR = 10 mA, Irr = 1 mA, RL = 100 Ω
Symbol
Min.
Max.
Unit
VF
-
750
mV
VF
-
840
mV
VF
-
900
mV
VF
-
1
V
VF
-
1.25
V
IR
-
100
nA
IR
-
100
µA
V(BR)R
120
-
V
CT
-
35
pF
trr
-
50
ns
REV.08
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