BC847S 查看數據表（PDF） - Galaxy Semi-Conductor

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BC847S

Dual NPN Small Signal Surface Mount Transistor

Galaxy Semi-Conductor 

Production specification

Dual NPN Small Signal Surface Mount Transistor BC847S

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO

Collector-emitter breakdown voltage V(BR)CEO

IC=10μA IE=0

IC=10mA IB=0

50 -

V

45 -

V

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter on voltage

Transition frequency

V(BR)EBO

ICBO

hFE

VCE(sat)

VBE(on)

fT

IE=10μA IC=0

VCB=30V IE=0

VCB=30V IE=0 TA=150℃

VCE=5V IC=2.0mA

IC=10mA IB=0.5mA

IC=100mA IB=5.0mA

IC=2.0mA,VCE=5.0V

IC=10mA,VCE=5.0V

6

-

V

15 nA

-

5.0 μA

110 630 -

0.25

-

V

0.65

0.58 0.7

V

-

0.77

VCE=5.0V,IC=20mA,f=100MHz 200

MHz

Output Capacitance

Cobo

VCB=10V,f=1.0MHz,IE=0

-

2

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

G024

Rev.A

www.gmicroelec.com

2

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