SIHFBC30STRL-GE3 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

SIHFBC30STRL-GE3

Power MOSFET

Vishay Semiconductors 

IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L

Vishay Siliconix

Fig. 9 - Maximum Drain Current vs. Case Temperature

VDS

VGS

Rg

RD

D.U.T.

10 V

Pulse width ≤ 1 µs

Duty factor ≤ 0.1 %

+- VDD

Fig. 10a - Switching Time Test Circuit

VDS

90 %

10 %

VGS

td(on) tr

td(off) tf

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

VDS

Vary tp to obtain

required IAS

Rg

10 V

tp

L

D.U.T.

IAS

0.01 Ω

+

- V DD

Fig. 12a - Unclamped Inductive Test Circuit

VDS

VDS

tp

VDD

IAS

Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91111

S11-1053-Rev. C, 30-May-11

www.vishay.com

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This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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