LDAN222T3G 查看數據表（PDF） - Shanghai Leiditech Electronic Technology Co., Ltd

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LDAN222T3G

Common Cathode Silicon Dual Switching Diode

Shanghai Leiditech Electronic Technology Co., Ltd 

7.OUTLINE AND DIMENSIONS

8.SOLDERING FOOTPRINT

LDAN222T1G

S-LDAN222T1G

Notes:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS A AND B DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.

MILLIMETERS

INCHES

DIM MIN NOM MAX MIN NOM MAX

A 1.50 1.60 1.70 0.059 0.063 0.067

B 0.75 0.85 0.95 0.030 0.034 0.040

C 0.60 0.70 0.80 0.024 0.028 0.031

D 0.23 0.28 0.33 0.009 0.011 0.013

G

0.50BSC

0.020BSC

H

0.53REF

0.021REF

J 0.10 0.15 0.20 0.004 0.006 0.008

K 0.30 0.40 0.50 0.012 0.016 0.02

L

1.10REF

0.043REF

M --- --- 10° --- --- 10°

N --- --- 10° --- --- 10°

S 1.50 1.60 1.70 0.059 0.063 0.067

Shanghai Leiditech Electronic Co.,Ltd

Email: sale1@leiditech.com

Tel : +86- 021 50828806

Fax : +86- 021 50477059

Rev :01.06.2018

4/4

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