SIHF730ASTRL-GE3 查看數據表（PDF） - Vishay Semiconductors
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SIHF730ASTRL-GE3 Datasheet PDF : 11 Pages
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IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mounted, steady-state)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
MAX.
40
1.7
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mAd
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 400 V, VGS = 0 V
VDS = 320 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3.3 Ab
VDS = 50 V, ID = 3.3 Ad
400
-
-
V
-
0.5
-
V/°C
2.0
-
4.5
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
1.0
3.1
-
-
S
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Coss eff.
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 0 V,
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5d
-
VDS = 1.0 V, f = 1.0 MHz
-
VGS = 0 V VDS = 320 V, f = 1.0 MHz
-
VDS = 0 V to 320 Vc, d
-
-
VGS = 10 V
ID = 3.5 A, VDS = 320 V,
see fig. 6 and 13b, d
-
-
-
VDD = 200 V, ID = 3.5 A,
-
Rg = 12 , RD = 57 , see fig. 10b, d
-
-
600
-
103
-
pF
4.0
-
890
-
30
-
45
-
-
22
-
5.8
nC
-
9.3
10
-
22
-
ns
20
-
16
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
5.5
A
-
-
22
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
VSD
TJ = 25 °C, IS = 5.5 A, VGS = 0 Vb
-
-
1.6
V
trr
-
TJ = 25 °C, IF = 3.5 A, dI/dt = 100 A/μsb, d
370
550
ns
Qrr
-
1.6
2.4
μC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
d. Uses IRF730A, SiHF730A data and test conditions.
www.vishay.com
2
Document Number: 91046
S11-1048-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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