CEM4228 查看數據表（PDF） - Unspecified

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CEM4228

N-Channel MOSFET uses advanced trench technology

Unspecified 

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=40V,ID=6.7A,RDS(ON)<32mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

CEM4228

S1

S

S

G

D

D

D

D

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

Drain Current – Continuous (TC=25℃ )

ID

Drain Current – Continuous (TC=100℃ )

IDM

Drain Current – Pulsed1

Power Dissipation (TC=25℃ )

PD

Power Dissipation – Derate above 25℃

TJ, TSTG Operating and Storage Junction Temperature Range

Thermal Characteristics：

Ratings

40

±20

6.7

4.3

26.8

2.5

0.02

-55 to +150

Symbol

Parameter

Max

RƟJC

Thermal Resistance,Junction to Case

50

RƟJA

Thermal Resistance,Junction to Ambient

62

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—1—

Units

V

V

A

W

℃

Units

℃/W

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