Qg
Tota l Gate Charge2,3
VGS=4.5V, VDS=20V,
Qgs
Ga te-Source Cha rge2,3
I D=3A
Qgd
Ga te-Drain “Miller” Charge2,3
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage3 VGS=0V,IS=1A,TJ=25℃
IS
Conti nuous Source Current
VG=VD=0V , Force
ISM
Pul s ed Source Current
Cu rre n t
Notes:
1. Repetitive Rating : Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
Typical Characteristics: (T =25℃ unless otherwise noted)
CEM4228
---
2.8 5.6
nC
---
0.5
1
nC
---
1.5
3
nC
---
---
1
V
---
---
6.7
A
---
---
13.4
A
TC , Case Temperature (℃)
Fig.1 Continuous Drain Current vs. TC
TJ , Junction Temperature (℃)
Fig.2 Normalized RDSON vs. TJ
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