CEM4311(2006) 查看數據表（PDF） - Chino-Excel Technology

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CEM4311
(Rev.:2006)

P-Channel Enhancement Mode Field Effect Transistor

Chino-Excel Technology 

CEM4311

Electrical Characteristics TA = 25 C unless otherwise noted

Parameter

Symbol

Test Condition

Min Typ Max Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics c

BVDSS

IDSS

IGSSF

IGSSR

VGS = 0V, ID = -250µA -30

VDS = -24V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

V

5

-1

µA

100 nA

-100 nA

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics d

VGS(th)

RDS(on)

VGS = VDS, ID = -250µA -1

VGS = -10V, ID = -7A

VGS = -4.5V, ID = -5.8A

-3

V

14

18 mΩ

23

30 mΩ

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics d

gFS

VDS = -10V, ID = -7A

15

S

Ciss

Coss

VDS = -15V, VGS = 0V,

f = 1.0 MHz

2020

395

pF

pF

Crss

202

pF

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

td(on)

tr

td(off)

VDD = -10V, ID = -1A,

VGS = -10V, RGEN = 6Ω

Turn-Off Fall Time

tf

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = -15V, ID = -7A,

VGS = -4.5V

Qgd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current b

IS

Drain-Source Diode Forward Voltage c

VSD

VGS = 0V, IS = -2.1A

16

30

ns

7

15

ns

105 200 ns

40

80

ns

16.4 22 nC

5.8

nC

6.5

nC

-2.1 A

-1.2 V

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

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