CEM6659 查看數據表（PDF） - Chino-Excel Technology

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CEM6659

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

Chino-Excel Technology 

CEM6659

N-Channel Electrical Characteristics TA = 25 C unless otherwise noted

Parameter

Symbol

Test Condition

Min

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics c

BVDSS

IDSS

IGSSF

IGSSR

VGS = 0V, ID = 250µA

60

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics d

VGS(th)

RDS(on)

VGS = VDS, ID = 250µA

1

VGS = 10V, ID = 4.1A

VGS = 4.5V, ID = 3.5A

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics d

gFS

Ciss

Coss

Crss

VDS = 10V, ID = 4.1A

VDS = 25V, VGS = 0V,

f = 1.0 MHz

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

td(on)

tr

td(off)

VDD = 30V, ID = 1A,

VGS = 10V, RGEN = 6Ω

Turn-Off Fall Time

tf

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Qg

Qgs

VDS = 30V, ID = 4.1A,

VGS = 10V

Qgd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current b

IS

Drain-Source Diode Forward Voltage c

VSD

VGS = 0V, IS = 2A

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Surface Mounted on FR4 Board, t < 10 sec.

c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

d.Guaranteed by design, not subject to production testing.

Typ Max Units

V

1

µA

100 µA

-100 µA

3

V

56

68 mΩ

66

86 mΩ

5

S

670

pF

80

pF

45

pF

11

25

ns

3

10

ns

30

60

ns

3

10

ns

13

17

nC

1.7

nC

2.6

nC

4.1

A

1.2

V

2

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