LU120N 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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LU120N Datasheet PDF : 7 Pages
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LU120N
TYPICAL CHARACTERISTICS (25 °C unless noted)
2.8
VGS = 10 V
2.4
ID = 15 A
2.0
1.6
1.2
0.8
0.4
0.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
20
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100
TJ = 150 °C
10
TJ = 25 °C
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
100
10 µs
15
Limited by RDS(on)*
10
100 µs
10
5
0
0
25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Avalanche Drain Current
vs. Case Temperature
2
1 Duty Cycle = 0.5
1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
1 s, DC
0.1 0.1
1
10
100
1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 - 4
10 - 3
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
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