LU110ATU 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

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LU110ATU

N-Channel 100-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

LU110ATU

www.VBsemi.tw

750

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

600

Crss = Cgd

Coss = Cds + Cgd

450

Ciss

300

150

0

100

91018_05

Coss

Crss

101

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

101

175 °C

25 °C

100

10-1

0.5

91018_07

VGS = 0 V

0.6 0.7 0.8 0.9 1.0 1.1 1.2

VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 9.2 A

16

VDS = 80 V

VDS = 50 V

12

VDS = 20 V

8

4

0

0

91018_06

For test circuit

see figure 13

4

8

12

16

20

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

103

Operation in this area limited

5

by RDS(on)

2

102

5

10 µs

2

100 µs

10

5

1 ms

2

1

5

2

0.1

0.1 2

10 ms

TC = 25 °C

TJ = 175 °C

Single Pulse

5 1 2 5 10 2 5 102 2

5 103

91018_08

VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

E-mail：China@VBsemi TEL:86-755-83251052

4

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