KF13N50P 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

零件编号

产品描述 (功能)

生产厂家

KF13N50P

N-Channel 650 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

KF13N50P

N-Channel 650 V (D-S) MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V) at TJ max.

RDS(on) max. () at 25 °C

Qg max. (nC)

Qgs (nC)

Qgd (nC)

Configuration

650

VGS = 10 V

106

14

33

Single

0.34

FEATURES

• Reduced trr, Qrr, and IRRM

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Low switching losses due to reduced Qrr

• Ultra low gate charge (Qg)

• Avalanche energy rated (UIS)

TO-220AB

GDS

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Pulsed Drain Current a

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single Pulse Avalanche Energy b

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt d

TJ = 125 °C

EAS

PD

TJ, Tstg

dV/dt

Soldering Recommendations (Peak Temperature) c

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5.1 A.

c. 1.6 mm from case.

d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

LIMIT

650

± 30

18

16

53

1.7

367

208

-55 to +150

37

31

300

E-mail：China@VBsemi TEL:86-755-83251052

UNIT

V

A

W/°C

mJ

W

°C

V/ns

°C

1

Share Link: