KNB3308A 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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KNB3308A Datasheet PDF : 9 Pages
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KNB3308A
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
www.VBsemi.tw
2.0
ID = 30 A
1.7
1.4
1.1
0.8
Axis Title
10000
VGS = 10 V
1000
VGS = 7.5 V
100
Axis Title
1.0
10000
0.4
1000
-0.2
ID = 5 mA
-0.8
100
ID = 250 μA
-1.4
0.5
10
-50 -25 0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
-2.0
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Threshold Voltage
0.05
Axis Title
10000
0.04
0.03
1000
0.02
0.01
0
2
TJ = 125 °C
100
TJ = 25 °C
4
6
8
VGS - Gate-to-Source Voltage (V)
2nd line
10
10
On-Resistance vs. Gate-to-Source Voltage
125
ID = 250 μA
120
Axis Title
115
110
10000
1000
100
105
-50 -25
10
0 25 50 75 100 125 150 175
TJ - Temperature (°C)
2nd line
Drain Source Breakdown vs. Junction Temperature
Axis Title
100
10000
10
1
0.1
0.01
TJ = 150 °C
TJ = 25 °C
1000
100
0.001
0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
2nd line
10
1.2
Source Drain Diode Forward Voltage
Axis Title
150
10000
120
1000
90
60
100
30
0
10
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
2nd line
Current De-Rating
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