K3929-01MR 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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K3929-01MR Datasheet PDF : 10 Pages
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K3929-01MR
N-Channel 650V (D-S) Power MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V) at TJ max.
RDS(on) max. at 25 °C (Ω)
Qg max. (nC)
Qgs (nC)
Qgd (nC)
Configuration
650
VGS = 10 V
43
0.68
5
22
Single
TO-220AB
TO-220 FULLPAK
FEATURES
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
APPLICATIONS
• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
• Industrial
D
D2PAK
(TO-263)
GD S
Top View
GDS
Top View
G
D
S
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current a
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt d
TJ = 125 °C
EAS
PD
TJ, Tstg
dV/dt
Soldering Recommendations (Peak Temperature) c
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.5 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT
650
± 30
12
9.4
45
3.6
290
106 /34
-55 to +150
15
4.1
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
E-mail：China@VBsemi TEL:86-755-83251052
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