STB8N65M5 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STB8N65M5

N-channel 650 V, 0.56 Ω, 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK

STMicroelectronics 

STB/D/F/I/P/U8N65M5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol

Parameter

TO-220,

D²PAK

I²PAK

IPAK

DPAK,

TO-220FP

Unit

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt (3)

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by TJMAX)

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

Peak diode recovery voltage slope

± 25

7

4.4

28

70

2

120

15

V

7 (1)

A

4.4 (1)

A

28 (1)

A

25

W

A

mJ

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited only by maximum temperature allowed.

2. Pulse width limited by safe operating area.

3. ISD ≤ 7A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS.

2500

V

-55 to 150

°C

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK IPAK TO-220 I²PAK D²PAK TO-220FP

Rthj-case

Thermal resistance

junction-case max

1.79

Rthj-amb

Thermal resistance

junction-ambient max

100

62.5

Rthj-pcb(1)

Thermal resistance

junction-pcb max

50

Maximum lead

Tl temperature for soldering

300

purpose

5

°C/W

62.5 °C/W

30

°C/W

300

°C

1. When mounted on 1 inch² FR-4 board, 2oz Cu.

Doc ID 16531 Rev 3

3/25

Share Link: